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Plasmonic silver nanoparticles for improved organic solar cells

Identifieur interne : 001679 ( Main/Repository ); précédent : 001678; suivant : 001680

Plasmonic silver nanoparticles for improved organic solar cells

Auteurs : RBID : Pascal:12-0295251

Descripteurs français

English descriptors

Abstract

In the present work we compare the performance of organic solar cells, based on the bulk heterojunction system of P3HT:PCBM when adequate silver nanoparticles (NPs) are incorporated in two distinct places among the device structure. Introduction of NPs on top of the transparent anode revealed better overall performance with an increased efficiency of 17%. Alternatively, placing the NPs on top of the active photovoltaic layer resulted to 25% higher photo-current generation albeit with inferior electrical characteristics (i.e series and shunt resistance). Our findings suggest that enhanced scattering to non-specular directions from NPs site is maximized when penetrating light meets the particles after the polymer blend, but even this mechanism is not sufficient enough to explain the enhanced short circuit current observed. A second mechanism should be feasible; that is plasmon enhancement which is more efficient in the case where NPs are in direct contact with the polymer blend. J-V characteristics measured in the dark showed that NPs placed on top of the ITO film act as enhanced hole conducting sites, as evident by the lower series resistance values in these cells, suggesting this mechanism as more significant in this case.

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Pascal:12-0295251

Le document en format XML

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<div type="abstract" xml:lang="en">In the present work we compare the performance of organic solar cells, based on the bulk heterojunction system of P3HT:PCBM when adequate silver nanoparticles (NPs) are incorporated in two distinct places among the device structure. Introduction of NPs on top of the transparent anode revealed better overall performance with an increased efficiency of 17%. Alternatively, placing the NPs on top of the active photovoltaic layer resulted to 25% higher photo-current generation albeit with inferior electrical characteristics (i.e series and shunt resistance). Our findings suggest that enhanced scattering to non-specular directions from NPs site is maximized when penetrating light meets the particles after the polymer blend, but even this mechanism is not sufficient enough to explain the enhanced short circuit current observed. A second mechanism should be feasible; that is plasmon enhancement which is more efficient in the case where NPs are in direct contact with the polymer blend. J-V characteristics measured in the dark showed that NPs placed on top of the ITO film act as enhanced hole conducting sites, as evident by the lower series resistance values in these cells, suggesting this mechanism as more significant in this case.</div>
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<fC03 i1="20" i2="X" l="ENG">
<s0>Butyric acid</s0>
<s2>NK</s2>
<s5>24</s5>
</fC03>
<fC03 i1="20" i2="X" l="SPA">
<s0>Butírico ácido</s0>
<s2>NK</s2>
<s5>24</s5>
</fC03>
<fC03 i1="21" i2="X" l="FRE">
<s0>Ester</s0>
<s5>25</s5>
</fC03>
<fC03 i1="21" i2="X" l="ENG">
<s0>Ester</s0>
<s5>25</s5>
</fC03>
<fC03 i1="21" i2="X" l="SPA">
<s0>Ester</s0>
<s5>25</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE">
<s0>Composé du fullerène</s0>
<s5>26</s5>
</fC03>
<fC03 i1="22" i2="3" l="ENG">
<s0>Fullerene compounds</s0>
<s5>26</s5>
</fC03>
<fC03 i1="23" i2="X" l="FRE">
<s0>Oxyde d'indium</s0>
<s5>27</s5>
</fC03>
<fC03 i1="23" i2="X" l="ENG">
<s0>Indium oxide</s0>
<s5>27</s5>
</fC03>
<fC03 i1="23" i2="X" l="SPA">
<s0>Indio óxido</s0>
<s5>27</s5>
</fC03>
<fC03 i1="24" i2="X" l="FRE">
<s0>ITO</s0>
<s4>INC</s4>
<s5>82</s5>
</fC03>
<fN21>
<s1>226</s1>
</fN21>
<fN44 i1="01">
<s1>OTO</s1>
</fN44>
<fN82>
<s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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